Інші пропозиції IRL6342PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRL6342PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC Tube |
товар відсутній |
|
 |
IRL6342PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 9.9A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V |
товар відсутній |
|
 |
IRL6342PBF | Виробник : Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 14.6mOhms 11nC |
товар відсутній |
|
 |
IRL6342PBF | Виробник : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.9A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |