IRL6342PBF
Код товару: 103695
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УКТЗЕД: 8541290010
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Інші пропозиції IRL6342PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRL6342PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 9.9A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Discontinued at Digi-Key Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 10µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRL6342PBF | Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 14.6mOhms 11nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRL6342PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: MOSFET N-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRL6342PBF |
|
Виробник: Infineon Technologies
MOSFET 30V 1 N-CH HEXFET 14.6mOhms 11nC
MOSFET 30V 1 N-CH HEXFET 14.6mOhms 11nC
товару немає в наявності
В кошику
од. на суму грн.