Інші пропозиції IRL6372PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRL6372PBF | International Rectifier |
 N-Channel, Dual, SOIC-8 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRL6372PBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8.1A 8SO Part Status: Discontinued at Digi-Key Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 10µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Current - Continuous Drain (Id) @ 25°C: 8.1A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IRL6372PBF |
|
Виробник: International Rectifier
N-Channel, Dual, SOIC-8 Транзистори
N-Channel, Dual, SOIC-8 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRL6372PBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8.1A 8SO
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: MOSFET 2N-CH 30V 8.1A 8SO
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.