Технічний опис IRLH7134TR2PBF Infineon Technologies
Description: MOSFET N-CH 40V 26A 8PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 8-PQFN (5x6), Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V.
Інші пропозиції IRLH7134TR2PBF
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IRLH7134TR2PBF | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 8-PQFN (5x6) Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V |
товару немає в наявності |
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IRLH7134TR2PBF | Виробник : Infineon / IR |
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товару немає в наявності |