IRLHM630TRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
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Технічний опис IRLHM630TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-VQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V, Power Dissipation (Max): 2.7W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 50µA, Supplier Device Package: PQFN (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V.
Інші пропозиції IRLHM630TRPBF за ціною від 27.07 грн до 111.80 грн
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IRLHM630TRPBF | Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC |
на замовлення 674 шт: термін постачання 21-30 дні (днів) |
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IRLHM630TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 21A/40A PQFN Packaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V Power Dissipation (Max): 2.7W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 50µA Supplier Device Package: PQFN (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V |
на замовлення 7349 шт: термін постачання 21-31 дні (днів) |
|
| IRLHM630TRPBF |
|
Виробник: Infineon Technologies
MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC
MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC
на замовлення 674 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 81.16 грн |
| 10+ | 71.57 грн |
| 100+ | 48.49 грн |
| 500+ | 40.10 грн |
| 1000+ | 34.75 грн |
| 4000+ | 29.53 грн |
| 8000+ | 27.07 грн |
| IRLHM630TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
на замовлення 7349 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 111.80 грн |
| 10+ | 68.26 грн |
| 100+ | 45.54 грн |
| 500+ | 33.59 грн |
| 1000+ | 30.64 грн |
| 2000+ | 28.16 грн |