Технічний опис IRLHS6242TR2PBF Infineon / IR
Description: MOSFET N-CH 20V 10A PQFN, Packaging: Cut Tape (CT), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 10µA, Supplier Device Package: 6-PQFN (2x2), Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V.
Інші пропозиції IRLHS6242TR2PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRLHS6242TR2PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 20V 10A 6-Pin PQFN EP T/R |
товару немає в наявності |
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IRLHS6242TR2PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 10A PQFN Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN (2x2) Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V |
товару немає в наявності |