IRLHS6276TRPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 6+ | 59.31 грн |
| 10+ | 36.15 грн |
| 100+ | 20.31 грн |
| 500+ | 15.51 грн |
| 1000+ | 13.98 грн |
| 2000+ | 12.66 грн |
| 4000+ | 12.45 грн |
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Технічний опис IRLHS6276TRPBF Infineon Technologies
Description: INFINEON - IRLHS6276TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 3.4 A, 3.4 A, 0.033 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3.4A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm, Verlustleistung, p-Kanal: 6.6W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: DFN2020, Anzahl der Pins: 6Pin(s), Produktpalette: HEXFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 6.6W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (21-Jan-2025).
Інші пропозиції IRLHS6276TRPBF за ціною від 13.48 грн до 62.88 грн
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IRLHS6276TRPBF | Виробник : Infineon Technologies |
 Description: MOSFET 2N-CH 20V 4.5A PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN Dual (2x2) Part Status: Active |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
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IRLHS6276TRPBF | Виробник : INFINEON |
Description: INFINEON - IRLHS6276TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 3.4 A, 3.4 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 6.6W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: HEXFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 6.6W Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
на замовлення 3985 шт: термін постачання 21-31 дні (днів) |
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IRLHS6276TRPBF | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 20V 4.5A PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN Dual (2x2) Part Status: Active |
товару немає в наявності |
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IRLHS6276TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Case: PQFN2X2 Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET x2 Kind of package: reel Polarisation: unipolar Power dissipation: 4.5W Drain current: 12A Drain-source voltage: 20V |
товару немає в наявності |