IRLHS6376TR2PBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 30V 3.6A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
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Технічний опис IRLHS6376TR2PBF Infineon Technologies
Description: MOSFET 2N-CH 30V 3.6A 6PQFN, Packaging: Cut Tape (CT), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V, Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 10µA, Supplier Device Package: 6-PQFN (2x2).
Інші пропозиції IRLHS6376TR2PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRLHS6376TR2PBF | Виробник : Infineon / IR |
MOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl |
товару немає в наявності |