Відгуки про товар
Написати відгук
Технічний опис IRLI520NPBF Infineon / IR
Description: MOSFET N-CH 100V 8.1A TO220AB FP, Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TO-220AB Full-Pak, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 30W (Tc).
Інші пропозиції IRLI520NPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRLI520NPBF | International Rectifier |
 TO220-ISO Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRLI520NPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 8.1A TO220AB FP Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TO-220AB Full-Pak Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 30W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLI520NPBF |
|
Виробник: International Rectifier
TO220-ISO Транзистори
TO220-ISO Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRLI520NPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.1A TO220AB FP
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Description: MOSFET N-CH 100V 8.1A TO220AB FP
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
товару немає в наявності
В кошику
од. на суму грн.