IRLIZ44GPBF VISHAY
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 2+ | 237.55 грн |
| 10+ | 153.56 грн |
| 50+ | 115.38 грн |
| 100+ | 103.50 грн |
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Технічний опис IRLIZ44GPBF VISHAY
Description: MOSFET N-CH 60V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.
Інші пропозиції IRLIZ44GPBF за ціною від 82.39 грн до 260.87 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IRLIZ44GPBF | Vishay Semiconductors |
MOSFETs N-Chan 60V 30 Amp |
на замовлення 976 шт: термін постачання 21-30 дні (днів) |
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IRLIZ44GPBF | Vishay Siliconix |
Description: MOSFET N-CH 60V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
на замовлення 1314 шт: термін постачання 21-31 дні (днів) |
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| IRLIZ44GPBF |
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Виробник: Vishay Semiconductors
MOSFETs N-Chan 60V 30 Amp
MOSFETs N-Chan 60V 30 Amp
на замовлення 976 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 254.91 грн |
| 10+ | 141.85 грн |
| 100+ | 105.72 грн |
| 500+ | 105.02 грн |
| 1000+ | 88.81 грн |
| IRLIZ44GPBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 1314 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 260.87 грн |
| 50+ | 127.56 грн |
| 100+ | 115.56 грн |
| 500+ | 88.73 грн |
| 1000+ | 82.39 грн |