IRLL2703TRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 3.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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Технічний опис IRLL2703TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 3.9A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.
Інші пропозиції IRLL2703TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRLL2703TRPBF | Infineon / IR |
MOSFET MOSFT 30V 5.5A 45mOhm 9.3nC Log Lvl |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLL2703TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223 Case: SOT223 Mounting: SMD Power dissipation: 1W Gate-source voltage: ±16V Pulsed drain current: 16A Drain-source voltage: 30V Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 45mΩ Drain current: 3.1A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| IRLL2703TRPBF |
|
Виробник: Infineon / IR
MOSFET MOSFT 30V 5.5A 45mOhm 9.3nC Log Lvl
MOSFET MOSFT 30V 5.5A 45mOhm 9.3nC Log Lvl
товару немає в наявності
В кошику
од. на суму грн.
| IRLL2703TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 1W
Gate-source voltage: ±16V
Pulsed drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 45mΩ
Drain current: 3.1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 1W
Gate-source voltage: ±16V
Pulsed drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 45mΩ
Drain current: 3.1A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.