Технічний опис IRLL2705PBF IR
- MOSFET, N, 55V, 3.8A, SOT-223
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:55V
- Cont Current Id:3.8A
- On State Resistance:0.04ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:2V
- Case Style:SOT-223
- Termination Type:SMD
- Current Temperature:25`C
- External Depth:7.3mm
- External Length / Height:1.7mm
- External Width:6.7mm
- Full Power Rating Temperature:25`C
- Junction to Case Thermal Resistance A:60`C/W
- Max Voltage Vds:55V
- Max Voltage Vgs th:2.5V
- No. of Transistors:1
- Power Dissipation:2.1W
- Power Dissipation Pd:2.1W
- Pulse Current Idm:30A
- SMD Marking:LL2705
- Tape Width:12mm
- Transistor Case Style:SOT-223
Інші пропозиції IRLL2705PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRLL2705PBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 55V 3.8A SOT223Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товар відсутній |
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IRLL2705PBF | Виробник : Infineon Technologies |
MOSFET 55V 1 N-CH HEXFET 40mOhms 32nC |
товар відсутній |