Технічний опис IRLL3303TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V.
Інші пропозиції IRLL3303TRPBF
| Фото | Назва | Виробник | Інформація |
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IRLL3303TRPBF | Виробник : INFINEON |
 Description: INFINEON - IRLL3303TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 4.6 A, 0.031 ohm, SOT-223, OberflächenmontageTransistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 4.6 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 1 Bauform - Transistor: SOT-223 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.031 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
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IRLL3303TRPBF | Виробник : INFINEON |
Description: INFINEON - IRLL3303TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 4.6 A, 0.031 ohm, SOT-223, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 4.6 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 1 Bauform - Transistor: SOT-223 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.031 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
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IRLL3303TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 4.6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V |
товару немає в наявності |
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IRLL3303TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 4.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V |
товару немає в наявності |
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IRLL3303TRPBF | Виробник : Infineon / IR |
MOSFET MOSFT 30V 4.6A 31mOhm 34nC Log Lvl |
товару немає в наявності |