Технічний опис IRLM210ATF FAIRCHILDRCILD
Description: MOSFET N-CH 200V 770MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 390mA, 5V, Power Dissipation (Max): 1.8W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Інші пропозиції IRLM210ATF
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IRLM210ATF | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 390mA, 5V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
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