IRLM220ATF onsemi / Fairchild

Description: MOSFET N-CH 200V 1.13A SOT223-4, Supplier Device Package: SOT-223-4, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 5V, Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete.