Технічний опис IRLR014NPBF
Description: MOSFET N-CH 55V 10A DPAK, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 28W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V.
Інші пропозиції IRLR014NPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
IRLR014NPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 10A DPAKVgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V Drain to Source Voltage (Vdss): 55 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRLR014NPBF | Infineon / IR |
MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLR014NPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 10A DPAK
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Description: MOSFET N-CH 55V 10A DPAK
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR014NPBF |
![]() |
Виробник: Infineon / IR
MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC
MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC
товару немає в наявності
В кошику
од. на суму грн.




