Технічний опис IRLR110ATF FSC
Description: MOSFET N-CH 100V 4.7A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 22W (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 2.35A, 5V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), FET Type: N-Channel, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції IRLR110ATF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRLR110ATF | Виробник : onsemi |
Description: MOSFET N-CH 100V 4.7A DPAKInput Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 22W (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 2.35A, 5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: N-Channel Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |

