Технічний опис IRLR2703PBF IR
Description: MOSFET N-CH 30V 23A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Інші пропозиції IRLR2703PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRLR2703PBF | International Rectifier |
 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRLR2703PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 23A DPAK Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLR2703PBF | Infineon / IR |
MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLR2703PBF |
|
Виробник: International Rectifier
Транзистори
Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRLR2703PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 30V 23A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRLR2703PBF |
|
Виробник: Infineon / IR
MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC
MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC
товару немає в наявності
В кошику
од. на суму грн.