Технічний опис IRLR2908TRLPBF Infineon / IR
Description: MOSFET N-CH 80V 30A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V.
Інші пропозиції IRLR2908TRLPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IRLR2908TRLPBF | Виробник : Infineon Technologies |
 MOSFET N-CH 80V 30A DPAK |
на замовлення 3 шт: термін постачання 5 дні (днів) |
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IRLR2908TRLPBF Код товару: 139351 |
Транзистори > Польові N-канальні |
товар відсутній
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IRLR2908TRLPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 80V 39A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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IRLR2908TRLPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 80V 30A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V |
товар відсутній |
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IRLR2908TRLPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 80V 30A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V |
товар відсутній |