IRLR3303PBF

IRLR3303PBF Infineon Technologies


irlr3303pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 35A 3-Pin(2+Tab) DPAK
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Технічний опис IRLR3303PBF Infineon Technologies

Description: MOSFET N-CH 30V 35A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 21A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: D-Pak, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V.

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IRLR3303PBF IRLR3303PBF Виробник : Infineon Technologies IRLR,U3303PbF.pdf Description: MOSFET N-CH 30V 35A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 21A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
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IRLR3303PBF IRLR3303PBF Виробник : Infineon / IR irlr3303-1169511.pdf MOSFET 30V 1 N-CH HEXFET 31mOhms 17.3nC
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