Технічний опис IRLR3802TRPBF Infineon / IR
Description: MOSFET N-CH 12V 84A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: D-Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V.
Інші пропозиції IRLR3802TRPBF
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| IRLR3802TRPBF | Виробник : Infineon |
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на замовлення 2000 шт: термін постачання 14-28 дні (днів) |
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IRLR3802TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 12V 84A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V |
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IRLR3802TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 12V 84A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V |
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IRLR3802TRPBF | Виробник : International Rectifier |
Description: IRLR3802 - HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: D-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V |
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