IRLR8113TRRPBF

IRLR8113TRRPBF Infineon Technologies


IRLR8113PbF, IRLU8113PbF.pdf Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 94A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
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Технічний опис IRLR8113TRRPBF Infineon Technologies

Description: MOSFET N-CH 30V 94A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 94A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: D-Pak, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V.

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IRLR8113TRRPBF IRLR8113TRRPBF Виробник : Infineon / IR international rectifier_irlr8113pbf-1169182.pdf MOSFET 30V 1 N-CH HEXFET 6mOhms 22nC
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