Технічний опис IRLR8256PBF International Rectifier
Description: MOSFET N-CH 25V 81A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 81A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V.
Інші пропозиції IRLR8256PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IRLR8256PBF | Infineon Technologies |
  Description: MOSFET N-CH 25V 81A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLR8256PBF | Infineon Technologies |
MOSFETs 25V 1 N-CH HEXFET 5.7mOhms 10nC |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLR8256PBF | INFINEON |
Description: INFINEON - IRLR8256PBF - Leistungs-MOSFET, n-Kanal, 25 V, 25 A, 0.0042 ohm, TO-252 (DPAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25 Dauer-Drainstrom Id: 25 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 63 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0042 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 1.8 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLR8256PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 81A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
Description: MOSFET N-CH 25V 81A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR8256PBF |
|
Виробник: Infineon Technologies
MOSFETs 25V 1 N-CH HEXFET 5.7mOhms 10nC
MOSFETs 25V 1 N-CH HEXFET 5.7mOhms 10nC
товару немає в наявності
В кошику
од. на суму грн.
| IRLR8256PBF |
|
Виробник: INFINEON
Description: INFINEON - IRLR8256PBF - Leistungs-MOSFET, n-Kanal, 25 V, 25 A, 0.0042 ohm, TO-252 (DPAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 25
Dauer-Drainstrom Id: 25
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 63
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0042
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 1.8
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IRLR8256PBF - Leistungs-MOSFET, n-Kanal, 25 V, 25 A, 0.0042 ohm, TO-252 (DPAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 25
Dauer-Drainstrom Id: 25
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 63
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0042
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 1.8
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.