IRLR8256PBF International Rectifier

Description: MOSFET N-CH 25V 81A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 63W (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 81A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.