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| 75+ | 54.97 грн |
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Технічний опис IRLR8721PBF Infineon / IR
Description: MOSFET N-CH 30V 65A DPAK, Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 65W (Tc).
Інші пропозиції IRLR8721PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRLR8721PBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 30V 65A DPAKRds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 65W (Tc) |
товару немає в наявності |