Технічний опис IRLS3036-7PPBF Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK, Packaging: Tube, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V, Power Dissipation (Max): 380W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: D2PAK (7-Lead), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V.
Інші пропозиції IRLS3036-7PPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IRLS3036-7PPBF | Infineon |
  IRLS3036-7PPBF MOSFET N-CH 60V 240A D2PAK Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRLS3036-7PPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 240A D2PAK Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLS3036-7PPBF | Infineon Technologies |
MOSFET 60V 1 N-CH HEXFET PWR MOSFET 1.9mOhms |
товару немає в наявності |
В кошику од. на суму грн. |
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IRLS3036-7PPBF | INFINEON |
Description: INFINEON - IRLS3036-7PPBF - Leistungs-MOSFET, n-Kanal, 60 V, 180 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 180 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 380 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0015 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 2.5 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLS3036-7PPBF |
|
Виробник: Infineon
IRLS3036-7PPBF MOSFET N-CH 60V 240A D2PAK Транзистори
IRLS3036-7PPBF MOSFET N-CH 60V 240A D2PAK Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRLS3036-7PPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLS3036-7PPBF |
|
Виробник: Infineon Technologies
MOSFET 60V 1 N-CH HEXFET PWR MOSFET 1.9mOhms
MOSFET 60V 1 N-CH HEXFET PWR MOSFET 1.9mOhms
товару немає в наявності
В кошику
од. на суму грн.
| IRLS3036-7PPBF |
|
Виробник: INFINEON
Description: INFINEON - IRLS3036-7PPBF - Leistungs-MOSFET, n-Kanal, 60 V, 180 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 180
Rds(on)-Messspannung Vgs: 4.5
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 380
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0015
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 2.5
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IRLS3036-7PPBF - Leistungs-MOSFET, n-Kanal, 60 V, 180 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 180
Rds(on)-Messspannung Vgs: 4.5
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 380
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0015
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 2.5
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.