Технічний опис IRLS3813PBF Infineon / IR
Description: MOSFET N-CH 30V 160A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V.
Інші пропозиції IRLS3813PBF
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IRLS3813PBF | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V |
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