Технічний опис IRLU024ZPBF IR
Description: MOSFET N-CH 55V 16A I-PAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Інші пропозиції IRLU024ZPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRLU024ZPBF | International Rectifier |
MOSFET N-CH 55V 16A I-PAK Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
|
IRLU024ZPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 16A I-PAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLU024ZPBF |
![]() |
Виробник: International Rectifier
MOSFET N-CH 55V 16A I-PAK Транзистори
MOSFET N-CH 55V 16A I-PAK Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRLU024ZPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 16A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 16A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику
од. на суму грн.




