Технічний опис IRLU2905ZPBF Infineon Technologies
Description: MOSFET N-CH 55V 42A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V.
Інші пропозиції IRLU2905ZPBF
Фото | Назва | Виробник | Інформація |
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IRLU2905ZPBF | Виробник : INFINEON |
![]() Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55 Dauer-Drainstrom Id: 60 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 110 Bauform - Transistor: TO-251AA Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.011 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 1 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
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IRLU2905ZPBF | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: IPAK (TO-251AA) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V |
товару немає в наявності |
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IRLU2905ZPBF | Виробник : Infineon / IR |
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товару немає в наявності |