IRLU3802PBF

IRLU3802PBF International Rectifier


IRSDS11016-1.pdf?t.download=true&u=5oefqw Виробник: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
на замовлення 10741 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
630+31.93 грн
Мінімальне замовлення: 630
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Технічний опис IRLU3802PBF International Rectifier

Description: MOSFET N-CH 12V 84A I-PAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 6.

Інші пропозиції IRLU3802PBF

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IRLU3802PBF IRLU3802PBF
Код товару: 94776
irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5 IRSDS11016-1.pdf?t.download=true&u=5oefqw Транзистори > Польові N-канальні
товар відсутній
IRLU3802PBF IRLU3802PBF Виробник : Infineon Technologies irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5 Description: MOSFET N-CH 12V 84A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 6
товар відсутній
IRLU3802PBF IRLU3802PBF Виробник : Infineon Technologies irlr3802pbf-1732987.pdf MOSFET 12V 1 N-CH HEXFET 8.5mOhm 27nC
товар відсутній