IRLU3802PBF International Rectifier

Description: HEXFET POWER MOSFET, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V.