Технічний опис IRLZ44ZLPBF Infineon / IR
Description: MOSFET N-CH 55V 51A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-262, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V.
Інші пропозиції IRLZ44ZLPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRLZ44ZLPBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-262 |
товару немає в наявності |
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IRLZ44ZLPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 55V 51A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V |
товару немає в наявності |