IRS2005MTRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
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Технічний опис IRS2005MTRPBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ, Packaging: Tape & Reel (TR), Package / Case: 14-VFQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 200 V, Supplier Device Package: 14-MLPQ (4x4), Rise / Fall Time (Typ): 70ns, 30ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції IRS2005MTRPBF за ціною від 31.04 грн до 74.78 грн
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IRS2005MTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ Packaging: Cut Tape (CT) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 14-MLPQ (4x4) Rise / Fall Time (Typ): 70ns, 30ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4240 шт: термін постачання 21-31 дні (днів) |
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IRS2005MTRPBF | Infineon Technologies |
Gate Drivers 200V high & low-side 0.6A,VCC & VBS UVLO |
на замовлення 2052 шт: термін постачання 21-30 дні (днів) |
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| IRS2005MTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: VFQFN14 Turn-on time: 160ns Power dissipation: 2.1W Voltage class: 200V Kind of integrated circuit: half-bridge Topology: H-bridge Integrated circuit features: MOSFET Operating temperature: -40...150°C Output current: 0.6A Pulse fall time: 30ns Impulse rise time: 70ns |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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| IRS2005MTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.54 грн |
| 10+ | 48.83 грн |
| 25+ | 44.08 грн |
| 100+ | 36.46 грн |
| 250+ | 34.12 грн |
| 500+ | 32.72 грн |
| 1000+ | 31.04 грн |
| IRS2005MTRPBF |
|
Виробник: Infineon Technologies
Gate Drivers 200V high & low-side 0.6A,VCC & VBS UVLO
Gate Drivers 200V high & low-side 0.6A,VCC & VBS UVLO
на замовлення 2052 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.78 грн |
| 10+ | 53.12 грн |
| 25+ | 41.73 грн |
| 100+ | 36.79 грн |
| 250+ | 34.49 грн |
| 500+ | 33.02 грн |
| 1000+ | 32.19 грн |
| IRS2005MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 45.97 грн |