IRS2008MPBFAUMA1 Infineon Technologies


infineon-irs2008s-m-datasheet-v01_00-en.pdf Виробник: Infineon Technologies
200-V Half-Bridge Driver
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Технічний опис IRS2008MPBFAUMA1 Infineon Technologies

Description: LEVEL SHIFT JUNCTION ISO, Packaging: Tape & Reel (TR), Package / Case: 14-VFQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 20V, Input Type: CMOS, High Side Voltage - Max (Bootstrap): 200 V, Supplier Device Package: 14-MLPQ (4x4), Rise / Fall Time (Typ): 70ns, 30ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 1, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, Part Status: Active, DigiKey Programmable: Not Verified.

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IRS2008MPBFAUMA1 IRS2008MPBFAUMA1 Виробник : Infineon Technologies Infineon-IRS2008(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3 Description: LEVEL SHIFT JUNCTION ISO
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IRS2008MPBFAUMA1 Виробник : Infineon Technologies Infineon-IRS2008(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3 Infineon
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