Технічний опис IRS2113MTRPBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ, Packaging: Tape & Reel (TR), Package / Case: 16-VFQFN Exposed Pad, 14 Leads, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 16-MLPQ (4x4), Rise / Fall Time (Typ): 25ns, 17ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel), Logic Voltage - VIL, VIH: 6V, 9.5V, Current - Peak Output (Source, Sink): 2.5A, 2.5A, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції IRS2113MTRPBF за ціною від 80.75 грн до 160.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRS2113MTRPBF | Infineon Technologies |
 Driver 2.5A 2-OUT High Side/Low Side Non-Inv 14-Pin MLPQ EP T/R |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
IRS2113MTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad, 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-MLPQ (4x4) Rise / Fall Time (Typ): 25ns, 17ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2925 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
IRS2113MTRPBF | Infineon Technologies |
Gate Drivers Hi&Lw Sd Drvr All HiVolt Pins 1 Sd |
на замовлення 2917 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
|
IRS2113MTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad, 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-MLPQ (4x4) Rise / Fall Time (Typ): 25ns, 17ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2925 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2925 шт В кошику од. на суму грн. |
| IRS2113MTRPBF |
|
Виробник: Infineon Technologies
Driver 2.5A 2-OUT High Side/Low Side Non-Inv 14-Pin MLPQ EP T/R
Driver 2.5A 2-OUT High Side/Low Side Non-Inv 14-Pin MLPQ EP T/R
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 105.02 грн |
| IRS2113MTRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.68 грн |
| 10+ | 114.73 грн |
| 25+ | 104.70 грн |
| 100+ | 87.98 грн |
| 250+ | 83.06 грн |
| 500+ | 80.75 грн |
| IRS2113MTRPBF |
|
Виробник: Infineon Technologies
Gate Drivers Hi&Lw Sd Drvr All HiVolt Pins 1 Sd
Gate Drivers Hi&Lw Sd Drvr All HiVolt Pins 1 Sd
на замовлення 2917 шт:
термін постачання 21-30 дні (днів)
| IRS2113MTRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2925 шт:
термін постачання 21-31 дні (днів)