Технічний опис IRS21953SPBF Infineon / IR
Description: IC GATE DRVR HALF BRD/LOW 16SOIC, Packaging: Tube, Package / Case: 16-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 16-SOIC, Rise / Fall Time (Typ): 25ns, 25ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Low-Side, Number of Drivers: 3, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.6V, 3.5V, Current - Peak Output (Source, Sink): 500mA, 500mA, DigiKey Programmable: Not Verified.
Інші пропозиції IRS21953SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IRS21953SPBF | Виробник : IR |
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на замовлення 5080 шт: термін постачання 14-28 дні (днів) |
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IRS21953SPBF | Виробник : Infineon Technologies |
Description: IC GATE DRVR HALF BRD/LOW 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 25ns, 25ns Channel Type: Independent Driven Configuration: Half-Bridge, Low-Side Number of Drivers: 3 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.6V, 3.5V Current - Peak Output (Source, Sink): 500mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |