Технічний опис IS42S16100H-6BLI-TR ISSI
Description: IC DRAM 16MBIT PARALLEL 60TFBGA, Packaging: Tape & Reel (TR), Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (6.4x10.1), Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 1M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS42S16100H-6BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS42S16100H-6BLI-TR | Виробник : ISSI |
 DRAM Chip SDRAM 16Mbit 1Mx16 3.3V 60-Pin TFBGA |
товару немає в наявності |
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IS42S16100H-6BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 16MBIT PARALLEL 60TFBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (6.4x10.1) Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS42S16100H-6BLI-TR | Виробник : ISSI |
DRAM 16M, 3.3V, SDRAM, 1Mx16, 166Mhz, 60 ball BGA (6.4mmx10.1mm) RoHS, IT, T&R |
товару немає в наявності |
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| IS42S16100H-6BLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |