Технічний опис IS42S16400J-7B2LI ISSI
Description: IC DRAM 64MBIT PAR 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 143 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (6.4x10.1), Part Status: Active, Memory Interface: Parallel, Access Time: 5.4 ns, Memory Organization: 4M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS42S16400J-7B2LI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS42S16400J-7B2LI | Виробник : ISSI |
 DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 60-Pin TFBGA |
товару немає в наявності |
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| IS42S16400J-7B2LI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 286 шт |
товару немає в наявності |
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IS42S16400J-7B2LI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 64MBIT PAR 60TFBGA Packaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 143 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (6.4x10.1) Part Status: Active Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS42S16400J-7B2LI | Виробник : ISSI |
DRAM 64M, 3.3V, 143Mhz SDR SDRAM |
товару немає в наявності |
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| IS42S16400J-7B2LI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |