IS42S32160D-6BI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 90TFBGA
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Packaging: Tape & Reel (TR)
Memory Organization: 16M x 32
Access Time: 5.4 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 90-TFBGA (8x13)
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM
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Технічний опис IS42S32160D-6BI-TR ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 90TFBGA, Voltage - Supply: 3V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 90-TFBGA, Packaging: Tape & Reel (TR), Memory Organization: 16M x 32, Access Time: 5.4 ns, Memory Interface: Parallel, Part Status: Obsolete, Supplier Device Package: 90-TFBGA (8x13), Memory Format: DRAM, Clock Frequency: 166 MHz, Technology: SDRAM.
Інші пропозиції IS42S32160D-6BI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IS42S32160D-6BI-TR | Виробник : ISSI |
DRAM 512M 16Mx32 166Mhz SDRAM, 3.3v |
товару немає в наявності |