Технічний опис IS42S32160F-75EBL ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 512Mb DRAM, Memory organisation: 4Mx32bitx4, Clock frequency: 133MHz, Access time: 7.5ns, Case: TFBGA90, Mounting: SMD, Operating temperature: 0...70°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 3...3.6V DC, кількість в упаковці: 240 шт.
Інші пропозиції IS42S32160F-75EBL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS42S32160F-75EBL | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
товар відсутній |
||
%20Renders/90-BGA%2013x8.jpg "IS42S32160F-75EBL") |
IS42S32160F-75EBL | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512M PARALLEL 90TFBGA |
товар відсутній |
|
 |
IS42S32160F-75EBL | Виробник : ISSI |
DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz a.CL2 , 90 ball BGA (8mmx13mm) RoHS |
товар відсутній |
|
| IS42S32160F-75EBL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |