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IS42SM32100D-6BLI-TR ISSI


42SM-RM-VM32100D.pdf Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx2; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 32Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
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Технічний опис IS42SM32100D-6BLI-TR ISSI

Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512kx32bitx2; 166MHz; 6ns; TFBGA90; -40÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 512kx32bitx2, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA90, Memory capacity: 32Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 2.7...3.6V DC.

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IS42SM32100D-6BLI-TR IS42SM32100D-6BLI-TR Виробник : ISSI, Integrated Silicon Solution Inc 42SM-RM-VM32100D.pdf Description: IC DRAM 32MBIT PARALLEL 54TFBGA
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IS42SM32100D-6BLI-TR Виробник : ISSI 42SM-RM-VM32100D-837968.pdf DRAM 32M, 3.3V, Mobile SDRAM, 1Mx32, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT, T&R
товар відсутній
IS42SM32100D-6BLI-TR Виробник : ISSI 42SM-RM-VM32100D.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx2; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 32Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
товар відсутній