%20Renders/706;54TFBGA-1.2-8x8;;54.jpg "IS42SM32100D-6BLI")
Технічний опис IS42SM32100D-6BLI ISSI, Integrated Silicon Solution Inc
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 32Mb DRAM, Memory organisation: 512kx32bitx2, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA90, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 2.7...3.6V DC.
Інші пропозиції IS42SM32100D-6BLI
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IS42SM32100D-6BLI | ISSI |
 DRAM 32M, 3.3V, Mobile SDRAM, 1Mx32, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT |
товару немає в наявності |
В кошику од. на суму грн. | |
| IS42SM32100D-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 32Mb DRAM Memory organisation: 512kx32bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.7...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. |
| IS42SM32100D-6BLI |
|
Виробник: ISSI
DRAM 32M, 3.3V, Mobile SDRAM, 1Mx32, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
DRAM 32M, 3.3V, Mobile SDRAM, 1Mx32, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
товару немає в наявності
В кошику
од. на суму грн.
| IS42SM32100D-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 32Mb DRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 32Mb DRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.