Технічний опис IS42VM16400M-6BLI ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54, Operating temperature: -40...85°C, Type of integrated circuit: DRAM memory, Clock frequency: 166MHz, Memory: 64Mb DRAM, Kind of interface: parallel, Memory organisation: 1Mx16bitx4, Kind of package: in-tray; tube, Case: TFBGA54, Kind of memory: SDRAM, Mounting: SMD, Supply voltage: 1.7...1.95V DC, Access time: 6ns, кількість в упаковці: 348 шт.
Інші пропозиції IS42VM16400M-6BLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IS42VM16400M-6BLI | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Clock frequency: 166MHz Memory: 64Mb DRAM Kind of interface: parallel Memory organisation: 1Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 6ns кількість в упаковці: 348 шт |
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%20Renders/706;54TFBGA-1.2-8x8;;54.jpg "IS42VM16400M-6BLI") |
IS42VM16400M-6BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 64MBIT PARALLEL 54TFBGA |
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| IS42VM16400M-6BLI | Виробник : ISSI |
DRAM 64M, 1.8V, M-SDRAM 4Mx16, 166Mhz, RoHS |
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| IS42VM16400M-6BLI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Clock frequency: 166MHz Memory: 64Mb DRAM Kind of interface: parallel Memory organisation: 1Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 6ns |
товар відсутній |