IS43DR16160B-3DBL-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 84TWBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 450 ps
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 84-TWBGA (8x12.5)
Memory Format: DRAM
Clock Frequency: 333 MHz
Technology: SDRAM - DDR2
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Packaging: Tape & Reel (TR)
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Технічний опис IS43DR16160B-3DBL-TR ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 84TWBGA, DigiKey Programmable: Not Verified, Memory Organization: 16M x 16, Access Time: 450 ps, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 84-TWBGA (8x12.5), Memory Format: DRAM, Clock Frequency: 333 MHz, Technology: SDRAM - DDR2, Voltage - Supply: 1.7V ~ 1.9V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 256Mbit, Mounting Type: Surface Mount, Package / Case: 84-TFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції IS43DR16160B-3DBL-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS43DR16160B-3DBL-TR | Виробник : ISSI |
DRAM 256M, 1.8V, DDR2, 16Mx16, 333Mhz a. CL5, 84 ball BGA (8mmx12.5mm) RoHS, T&R |
товару немає в наявності |