IS43DR16640C-3DBL ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution IncDescription: IC DRAM 1GBIT PARALLEL 84TWBGA
Packaging: Tray
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-TWBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1670 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.73 грн |
| 10+ | 236.54 грн |
| 25+ | 231.37 грн |
| 40+ | 215.99 грн |
| 209+ | 193.66 грн |
| 418+ | 192.95 грн |
| 627+ | 182.85 грн |
| 1045+ | 173.84 грн |
Відгуки про товар
Написати відгук
Технічний опис IS43DR16640C-3DBL ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 84TWBGA, Packaging: Tray, Package / Case: 84-TFBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 85°C (TC), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 333 MHz, Memory Format: DRAM, Supplier Device Package: 84-TWBGA (8x12.5), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 450 ps, Memory Organization: 64M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS43DR16640C-3DBL за ціною від 182.45 грн до 295.16 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IS43DR16640C-3DBL | Виробник : ISSI |
DRAM DDR2,1G,1.8V, RoHs 333MHz,64Mx16 |
на замовлення 1929 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| IS43DR16640C-3DBL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Memory capacity: 1Gb Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товар відсутній |
||||||||||||||||||
| IS43DR16640C-3DBL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; 0÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Memory capacity: 1Gb Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товар відсутній |