IS43LQ32128AL-062TBLI ISSI
Виробник: ISSI4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
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Технічний опис IS43LQ32128AL-062TBLI ISSI
Description: 4G, 0.57-0.65V/1.06-1.17/1.70-1., Packaging: Bulk, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 95°C (TC), Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 1.6 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Memory Interface: LVSTL, Memory Organization: 128M x 32, DigiKey Programmable: Not Verified.
Інші пропозиції IS43LQ32128AL-062TBLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43LQ32128AL-062TBLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: 4G, 0.57-0.65V/1.06-1.17/1.70-1. Packaging: Bulk Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Memory Interface: LVSTL Memory Organization: 128M x 32 DigiKey Programmable: Not Verified |
товар відсутній |
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IS43LQ32128AL-062TBLI | Виробник : ISSI |
DRAM 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS |
товар відсутній |