Технічний опис IS43LR16160G-6BL ISSI
Description: IC DRAM 256MBIT PAR 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x10), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS43LR16160G-6BL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS43LR16160G-6BL | Виробник : ISSI |
 DRAM Chip Mobile-DDR SDRAM 256Mbit 16Mx16 1.8V 60-Pin TFBGA |
товару немає в наявності |
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IS43LR16160G-6BL | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 60TFBGA Packaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS43LR16160G-6BL | Виробник : ISSI |
DRAM 256M, 18V, Mobile DDR, 16Mx16, 166Mhz, 90 ball BGA (8mmx10mm) RoHS |
товару немає в наявності |
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| IS43LR16160G-6BL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |