Технічний опис IS43LR16400C-6BLI ISSI
Description: IC DRAM 64MBIT PARALLEL 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x10), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 4M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS43LR16400C-6BLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IS43LR16400C-6BLI | Виробник : ISSI |
 DRAM Chip DDR SDRAM 64Mbit 4Mx16 1.8V 60-Pin TFBGA |
товару немає в наявності |
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IS43LR16400C-6BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 64MBIT PARALLEL 60TFBGA Packaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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| IS43LR16400C-6BLI | Виробник : ISSI |
DRAM 64M, 1.8V, M-DDR 4Mx16, 166Mhz, RoHS |
товару немає в наявності |
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| IS43LR16400C-6BLI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: in-tray; tube Kind of memory: LPDDR; SDRAM Kind of interface: parallel Mounting: SMD Case: TFBGA60 Memory organisation: 1Mx16bitx4 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 1.7...1.95V DC Memory: 64Mb DRAM Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |