Технічний опис IS43LR32160C-6BL ISSI
Description: IC DRAM 512MBIT PAR 90TFBGA, Packaging: Tray, Package / Case: 90-TFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 90-TFBGA (8x13), Write Cycle Time - Word, Page: 12ns, Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 16M x 32, DigiKey Programmable: Not Verified.
Інші пропозиції IS43LR32160C-6BL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS43LR32160C-6BL | Виробник : ISSI, Integrated Silicon Solution Inc |
 Description: IC DRAM 512MBIT PAR 90TFBGAPackaging: Tray Package / Case: 90-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 90-TFBGA (8x13) Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 16M x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
|
 |
IS43LR32160C-6BL | Виробник : ISSI |
DRAM 512M, 18V, Mobile DDR, 16Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS |
товару немає в наявності |