Технічний опис IS43LR32160C-6BLI-TR ISSI
Description: IC DRAM 512MBIT PAR 90TFBGA, Packaging: Tape & Reel (TR), Package / Case: 90-TFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 90-TFBGA (8x13), Write Cycle Time - Word, Page: 12ns, Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 16M x 32, DigiKey Programmable: Not Verified.
Інші пропозиції IS43LR32160C-6BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IS43LR32160C-6BLI-TR | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC кількість в упаковці: 2500 шт |
товару немає в наявності |
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IS43LR32160C-6BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512MBIT PAR 90TFBGA Packaging: Tape & Reel (TR) Package / Case: 90-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 90-TFBGA (8x13) Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 16M x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS43LR32160C-6BLI-TR | Виробник : ISSI |
DRAM 512M, 18V, Mobile DDR, 16Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R |
товару немає в наявності |
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| IS43LR32160C-6BLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |