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Технічний опис IS43LR32160C-6BLI ISSI
Description: IC DRAM 512MBIT PAR 90TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 16M x 32, Access Time: 5.5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 12ns, Supplier Device Package: 90-TFBGA (8x13), Memory Format: DRAM, Clock Frequency: 166 MHz, Technology: SDRAM - Mobile LPDDR, Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 90-TFBGA, Packaging: Tray.
Інші пропозиції IS43LR32160C-6BLI
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IS43LR32160C-6BLI | ISSI, Integrated Silicon Solution Inc |
 Description: IC DRAM 512MBIT PAR 90TFBGADigiKey Programmable: Not Verified Memory Organization: 16M x 32 Access Time: 5.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 12ns Supplier Device Package: 90-TFBGA (8x13) Memory Format: DRAM Clock Frequency: 166 MHz Technology: SDRAM - Mobile LPDDR Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 90-TFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. |
| IS43LR32160C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. |
| IS43LR32160C-6BLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 90TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 32
Access Time: 5.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 12ns
Supplier Device Package: 90-TFBGA (8x13)
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Packaging: Tray
Description: IC DRAM 512MBIT PAR 90TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 32
Access Time: 5.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 12ns
Supplier Device Package: 90-TFBGA (8x13)
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| IS43LR32160C-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.