Технічний опис IS43R16160F-5BL ISSI
Description: IC DRAM 256MBIT PAR 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x13), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS43R16160F-5BL
| Фото | Назва | Виробник | Інформація |
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IS43R16160F-5BL | Виробник : ISSI, Integrated Silicon Solution Inc |
 Description: IC DRAM 256MBIT PAR 60TFBGAPackaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS43R16160F-5BL | Виробник : ISSI |
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS |
товару немає в наявності |
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| IS43R16160F-5BL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Case: TFBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |