IS43R16160F-5TLI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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Технічний опис IS43R16160F-5TLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II, Packaging: Tape & Reel (TR), Package / Case: 66-TSSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 66-TSOP II, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS43R16160F-5TLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS43R16160F-5TLI-TR | Виробник : ISSI |
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS, IT, T&R |
товару немає в наявності |
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| IS43R16160F-5TLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |